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PD - 5.031
CPV362MM
IGBT SIP MODULE
Features
* Short Circuit Rated - 10s @ 125C, V GE = 15V Fully isolated printed circuit board mount package * Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diodes * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve *
3 Q1 D1 9 4 6 Q2 D2 12 Q4 D4 18 Q3 D3 15 Q5 D5 16 D6
Short Circuit Rated Fast IGBT
1
10 Q6
Product Summary
7 13 Output Current in a Typical 5.0 kHz Motor Drive 4.6 ARMS per phase (1.4 kW total) with T C = 90C, T J = 125C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1) 19
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to power applications and where space is at a premium. These new short circuit rated devices are especially suited for motor control and other totem-pole applications requiring short circuit withstand capability.
IMS-2
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25C IC @ T C = 100C ICM ILM IF @ T C = 100C IFM tsc VGE VISOL PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 minute Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
600 7.9 4.6 16 16 3.4 16 10 20 2500 23 9.1 -40 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbf*in (0.55 - 0.8 N*m)
Units
V
A
s V VRMS W
C
Thermal Resistance
Parameter
RJC (IGBT) RJC (DIODE) RCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, greased surface Weight of module
Typ.
-- -- 0.1 20 (0.7)
Max.
5.5 9.0 -- --
Units
C/W g (oz)
Revision 2
C-409
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CPV362MM
Electrical Characteristics @ T = 25C (unless otherwise specified) J
V(BR)CES
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A -- 0.42 -- V/C VGE = 0V, IC = 1.0mA -- 2.2 3.3 IC = 4.6A V GE = 15V -- 2.8 -- V IC = 7.9A See Fig. 2, 5 -- 2.5 -- IC = 4.6A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 2.7 3.8 -- S VCE = 100V, I C =8.0A -- -- 250 A VGE = 0V, V CE = 600V -- -- 1700 VGE = 0V, V CE = 600V, T J = 150C -- 1.4 1.7 V IC = 8.0A See Fig. 13 -- 1.3 1.6 IC = 8.0A, T J = 150C -- -- 500 nA VGE = 20V
Switching Characteristics @ T = 25C (unless otherwise specified) J
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During t b Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 16 3.6 6.0 66 28 140 53 0.18 0.14 0.32 -- 64 25 240 160 0.56 365 47 4.8 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 24 IC = 8.0A 5.2 nC VCC = 400V 9.0 See Fig. 8 -- TJ = 25C -- ns IC = 4.6A, V CC = 480V 210 VGE = 15V, R G = 50 100 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 11, 18 0.48 -- s VCC = 360V, T J = 125C VGE = 15V, R G = 50, VCPK < 500V -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 4.6A, V CC = 480V -- VGE = 15V, R G = 50 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 55 ns TJ = 25C See Fig. 90 TJ = 125C 14 I F = 8.0A 5.0 A TJ = 25C See Fig. 8.0 TJ = 125C 15 V R = 200V 138 nC TJ = 25C See Fig. 360 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 Pulse width 5.0s, single shot.
Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20)
VCC=80%(V CES), VGE=20V, L=10H, R G= 50, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%.
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CPV362MM
12
3.7
9
2.8
6
1.9
3
TC = 90C TJ = 125C Power Factor = 0.8 Modulation Depth = 0.8 VCC = 60% of Rated Voltage
0.1 1 10 100
0.9
0
0
f, Frequency (kHz)
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
100
100
IC , Collector-to-Emitter Current (A)
T = 25C J TJ = 150C
10
IC , Collector-to-Emitter Current (A)
TJ = 150C
10
TJ = 25C
1 1
VGE = 15V 20s PULSE WIDTH A
10
1 5 10
VCC = 100V 5s PULSE WIDTH A
15 20
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
C-411
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Total Output Power (kW)
Load Current (A)
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CPV362MM
8
6
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
VGE = 15V
5.0
VGE = 15V 80s PULSE WIDTH
4.0
IC = 9.2A
3.0
4
IC = 4.6A
2.0
2
IC = 2.3A
0 25 50 75 100 125
A
150
1.0 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
TC , Case Temperature (C)
TC, Case Temperature (C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
10
Therm al R e sp onse (Z thJC )
D = 0.5 0
1
0.20 0.10 0.0 5 0.02 0.01
PD M
0.1
SIN G L E P U LS E (TH E RM AL R E SP O N SE )
N o te s : 1 . D u ty f ac t or D = t
t
1 t2
1
/t
2
0.01 0.00001
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , R ectangular Pulse D ura tion (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-412
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CPV362MM
600
VGE , Gate-to-Emitter Voltage (V)
V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc
20
VCE = 400V I C = 8.0A
16
C, Capacitance (pF)
Cies
400
12
Coes
8
200
4
Cres
0 1 10
A
100
0 0 4 8 12 16
A
20
VCE, Collector-to-Emitter Voltage (V)
Qg , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
0.34
Total Switching Losses (mJ)
0.33
0.32
Total Switching Losses (mJ)
VCC VGE TC IC
= 480V = 15V = 25C = 4.6A
10
RG = 50 V GE = 15V V CC = 480V
I C = 9.2A
1
0.31
I C = 4.6A I C = 2.3A
0.30
0.29 0 10 20 30 40 50
A
60
0.1 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
R G , Gate Resistance ()
TC , Case Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
C-413
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CPV362MM
1.5
1.2
0.9
IC , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG TC V CC V GE
= 50 = 150C = 480V = 15V
100
VGE = 20V TJ = 125C
10
SAFE OPERATING AREA
0.6
0.3
0.0 0 2 4 6 8
A
10
1 1 10 100
A
1000
I C , Collector-to-Emitter Current (A)
VCE, Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
10
TJ = 150C TJ = 125C TJ = 25C
1
0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-414
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CPV362MM
100 100
VR = 200V TJ = 125C TJ = 25C
80
VR = 200V TJ = 125C TJ = 25C
IF = 16A
t rr - (ns)
60
I F = 8.0A
I IRRM - (A)
I F = 16A
10
IF = 8.0A I F = 4.0A
40
I F = 4.0A
20
0 100
di f /dt - (A/s)
1000
1 100
1000
di f /dt - (A/s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
500
10000
VR = 200V TJ = 125C TJ = 25C
400
VR = 200V TJ = 125C TJ = 25C
300
di(rec)M/dt - (A/s)
Q RR - (nC)
I F = 16A
200
IF = 4.0A
1000
IF = 8.0A I F = 16A
I F = 8.0A
100
IF = 4.0A
0 100 100 100
di f /dt - (A/s)
1000
1000
di f /dt - (A/s)
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-415
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CPV362MM
90% Vge Same type device as D.U.T. +Vge
Vce
80% of Vce
430F D.U.T. Ic 10% Vce Ic
90% Ic 5% Ic
td(off)
tf
Eoff =
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf
t1+5S Vce ic dt t1
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg
trr Ic
Qrr =
trr id dt tx
tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic
10% Irr Vcc
Vpk Irr
DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3
t4 Erec = Vd id dt t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining E on, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E rec, trr, Qrr, Irr
Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 5 - IMS-2 Package (13 pins) Section D - page D-14
C-416
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